3

Drain-extended MOS transistors capable for operation at 10 V and at radio frequencies

Year:
2011
Language:
english
File:
PDF, 1.12 MB
english, 2011
40

High-Performance SiGe HBTs for Next Generation BiCMOS Technology

Year:
2018
Language:
english
File:
PDF, 1010 KB
english, 2018